1480 nm Diode-Pumped Er<sup>3+</sup>:Yb<sup>3+</sup> Co-Doped Phospho-Alumino-Silicate Fiber for Extending the L-Band Gain Up to 1625 nm
نویسندگان
چکیده
In this article, we report erbium/ytterbium (Er/Yb) co-doped phospho-alumino-silicate fibers (EYDFs) fabricated by the modified chemical vapor deposition (MCVD) and solution doping technique, to extend L-band gain up 1625 nm. Fibers with different concentrations Yb-to-Er ratios were studied in terms of spectroscopic properties optical amplification when pumped at 1480 A higher ratio suppressed signal-induced excited-state absorption (ESA) effect also improved amplifier L-band. maximum 15.5 dB nm was achieved for fiber an 3.5. The coefficient 0.039 dB/mW saturation output power 21.5 dBm 1600 On other hand, one highly doped Er 2 O xmlns:xlink="http://www.w3.org/1999/xlink">3 concentration 0.5 mol% 2 demonstrated have controlled quenching a reduced device length, exhibiting 12.9 6.3 noise figure (NF) nm, <5.8 NF from 1575 1623 What's more, temperature-dependent performance studied, over temperature range −60 80 °C. temperature-dependent-gain (TDG) its zero-point wavelength reported. An increased cooling fiber.
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ژورنال
عنوان ژورنال: Journal of Lightwave Technology
سال: 2023
ISSN: ['0733-8724', '1558-2213']
DOI: https://doi.org/10.1109/jlt.2023.3253426